H2R Electronics

Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE, switching performance and low gate charge. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications.

Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application.

FEATURES:

• 60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A 
• Low conduction loss 
• Fast switching 
• High input impedance

The G4PC50W is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications like switch-mode power supplies and power factor correction. It features a low conduction loss and minimal minority-carrier recombination, making it suitable for resonant mode switching

• Voltage: 600V
• Current: 55A
• Type: IGBT (Insulated Gate Bipolar Transistor)
• Channel: N-channel
• Applications: Switch-mode power supplies, power factor correction, inverters, motor drives, welding equipment, and other high-power switching applications. 

The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. The IGBT can switch 1200V with a current rating of upto 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs.

PG-TO247-3 package

1. Very low VCE(sat) 1.5V (typ.)
2. Maximum Junction Temperature 175°C
3. Short circuit withstand time 5 us
4. Positive temperature coefficient in VCE(sat)
5. Very tight parameter distribution
6. High ruggedness, temperature stable behaviour
7. Very high switching speed
8. Low EMI
9. Very soft, fast recovery anti-parallel Emitter Controlled HE diode
10. Qualified according to JEDEC for target applications
11. Pb-free lead plating; RoHS compliant

The FGA15N120 from KEC is a 1200V, 15A IGBT in through hole TO-3P package. KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH (induction heating), microwave oven, etc.

The FGH75T65 is an N-channel, Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) manufactured by onsemi (formerly Fairchild Semiconductor). It is designed for high-efficiency applications requiring fast switching and low power losses, such as solar inverters, Uninterruptible Power Supply (UPS) systems, welding equipment, and motor drives. 

The part number "FGH850T65" is likely a misspelling or an incorrect transcription. Based on common industry part numbering conventions and search results for similar components, the intended part number is likely FGH80T65SPD or a similar variation like FGH80T65SQD. These are N-Channel Insulated Gate Bipolar Transistors (IGBTs) manufactured by Onsemi (formerly Fairchild). Key Specifications (for FGH80T65SPD) 

• Type: N-Channel IGBT, Field Stop Trench technology.
• Collector-Emitter Voltage (Vces): 650 V.
• Continuous Collector Current (Ic): 80 A (at TC𝐶 = 25°C), 40 A (at TC𝐶 = 100°C).
• Gate-Emitter Voltage (Vges): ±20 V.
• Collector-Emitter Saturation Voltage (Vces(sat)): Typically 1.85 V (at IC𝐶 = 40 A, VGE𝐺𝐸 = 15 V).
• Maximum Junction Temperature (Tj): 175°C.
• Package Type: TO-247-3L (3-pin).
• Co-packaged Diode: Includes a soft and fast co-packaged free-wheeling diode. 

Applications These IGBTs are designed for demanding switching applications where low conduction and switching losses are essential. Typical applications include: 

• Solar inverters
• Uninterruptible power supplies (UPS)
• Welders
• Digital power generators
• Telecom and ESS (Energy Storage Systems)
• Power Factor Correction (PFC) circuits 

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

• Maximum Junction Temperature: TJ =175°C
• Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

• Max Junction Temperature 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

Discrete IGBTs Silicon N-Channel IGBT GT 50JR22 GT50JR22 1.
Applications
• D edicated to Current-Resonant Inverter S witching Applications Note: The product (s) described herein should not be used for any other application.
2.
Features (1) 6.
5th generation (2) The RC-IGBT c onsists of a Freewheeling Diode(FWD) mo nolithically integrated in an IGBT chip .
(3) Enhancement mode (4) High-speed s witching IGBT : tf = 0.
05 µs (typ.
) (I C = 50 A) FWD : trr = 0.
35 µs (typ.
) ( IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.
55 V (typ.
) (IC = 50 A) ( 6) High junction temperature : Tj = 175 (max) 3

ype Designator: GT40QR21
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40QR21
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Package: TO3P

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features

• Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switchin
• 5 ms Short−Circuit Capability • These are Pb−Free Devices

Typical Applications

• Solar Inverters
• Uninterruptable Power Supply (UPS)

The RHRG75120 is a Hyperfast Diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

• High reliability
• Avalanche energy rated
• 1200VDC Blocking voltage
• 190W Maximum power dissipation
• 0.8°C/W Junction to case thermal resistance

The H20PR5 is an IGBT (Insulated-Gate Bipolar Transistor) manufactured by Infineon Technologies, commonly used in high-power applications such as induction cookers and resonant converters. Its full part number is typically IHW20N135R5.

Key Specifications
Type: N-Channel IGBT with a monolithic body diode (Reverse Conducting).
Voltage Rating: 1350V.
Current Rating: 20A (up to 40A, depending on specific test conditions and documentation).
Package Type: TO-247.
Power Dissipation: 288W.
Technology: Features Infineon's TRENCHSTOP™ technology, which provides a high breakdown voltage, low collector-emitter saturation voltage (VCEsat), and easy parallel switching capability.

The TGAN 60N65 IGBT is IGBT transistor, a 650V, 60A device designed for high-temperature and high-voltage applications, particularly in power electronics like solar inverters, welders, and telecommunication systems. It utilizes novel Field Stop technology for efficient conduction and switching losses, offering high performance and reliability in various power management tasks.  Key Characteristics and Applications

• Part Number:The most common identification for this type of device is the Fairchild FGA60N65SMD. 
• Voltage and Current Rating:It is rated for 650V and 60A. 
• Technology:It employs a second-generation Field Stop IGBT technology for improved performance. 
• Key Features:
  • High efficiency for demanding applications. 
  • Low conduction and switching losses. 
  • Reliability and robustness for various power management needs. 
• Applications:
  • Solar inverters 
  • Uninterruptible Power Supplies (UPS) 
  • Welding equipment 
  • Telecommunications 
  • Power Factor Correction (PFC) circuits 
  • Energy Storage Systems (ESS)