H2R Electronics

IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Detailed Specifications:-

• Industry standard through-hole power package
• High-current rating
• Product qualification according to JEDEC standard
• Silicon optimized for applications switching below <100 kHz
• Softer body-diode compared to previous silicon generation
• Wide portfolio available

Benefits

• Standard pinout allows for drop in replacement
• High-current carrying capability package
• Industry standard qualification level
• High performance in low frequency applications
• Increased power density
• Provides designers flexibility in selecting the most optimal device for their application

• Drain to source voltage Vds is 200V
• Gate to source voltage is ±20V
• On resistance Rds(on) of 150mohm
• Power dissipation Pd of 150W at 25°C
• Continuous drain current Id of 18A at Vgs 10V and 25°C
• Operating junction temperature range from -55°C to 175°C

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  • N-Channel MOSFET: The IRF1407 is an N-channel MOSFET, meaning it conducts current when a positive voltage is applied to its gate.
  • HEXFET Technology: It utilizes the HEXFET power MOSFET technology, which provides low on-resistance and fast switching speeds for efficient power conversion.
  • 75V Voltage Rating: The MOSFET can handle a drain-source voltage of up to 75V.
  • 130A Current Capacity: It can conduct a continuous drain current of up to 130A.
  • TO-220 Package: The IRF1407 is typically housed in the TO-220 package, which offers good thermal management and is easy to mount on a PCB.
  • Low On-Resistance: The MOSFET has a low on-resistance (typically 7.8mΩ at 10V), which minimizes power loss during conduction.
  • Fast Switching Speed: It offers fast switching speeds, enabling efficient switching applications.
  • Operating Temperature: The IRF1407 can operate at a junction temperature of up to 175°C.
  • Automotive Applications: It's specifically designed for automotive applications due to its robust characteristics and ability to handle high currents. 
  • Switching Circuits:The IRF1407 is well-suited for switching applications where high currents need to be controlled, such as in power supplies and motor control circuits. 
  • Amplification Circuits:It can be used as a switching element in amplification circuits. 
  • Automotive Applications:Its ruggedness and ability to handle high currents make it suitable for various automotive applications. 
The IRF1407 is an N-channel power MOSFET designed for high-current, low on-resistance applications. It's commonly used in switching and amplification circuits, particularly where efficient power handling is crucial. This MOSFET features a 75V voltage rating and 130A current capacity, making it suitable for various power electronic projects. Here's a more detailed breakdown:Key Features: Applications:

• High-Speed Switching: The SKD503T is optimized for fast switching, which reduces switching losses and improves efficiency in power conversion applications.

• Low On-Resistance (R_DS(on)): Offers low conduction losses, ensuring better efficiency and thermal performance.

• High Voltage Tolerance: Capable of handling high voltages, making it suitable for both low and high voltage applications.

• Robust Design: Designed to withstand high levels of stress and provide reliable operation in demanding environments.

• High Current Capability: Supports high drain current, making it suitable for power-intensive applications.

• Drain-Source Voltage (V_DS): 500V

• Gate-Source Voltage (V_GS): ±20V

• Continuous Drain Current (I_D): 18A

• Pulsed Drain Current (I_DM): 72A

• On-Resistance (R_DS(on)): 0.3Ω (typical)

• High-Quality MOSFET Transistor: The Jeking 65F6041 68A 650V TO-247 MOSFET Transistor IPW65R041CFD is a high-quality MOSFET transistor designed for reliable performance in various applications.

• N-channel Power MOSFET:This indicates the type of transistor and its conductivity type.
• MDmesh M2 technology:This refers to STMicroelectronics' specific technology used in the design of this MOSFET, which optimizes performance for high-efficiency applications.
• Low on-resistance:This means the MOSFET offers minimal resistance when turned on, reducing power loss.
• Optimized switching characteristics:This refers to the MOSFET's ability to switch on and off quickly and efficiently, which is crucial for high-frequency applications.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier T0-218 package because of its isolated mounting hole.

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• ROHS3 Compliant

• No SVHC

• Contains Lead, Lead Free

• Switching Applications

• New Energy Vehicle

• Photovoltaic Generation

• Wind Power Generation

• Smart Grid

IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

• Fully characterized capacitance and avalanche voltage and current
• Effective Coss specified
• ±30V Gate-source voltage

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability

Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, or M3 screw

EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current c Repetitive Avalanche Energy A mJ

Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction-to-Ambient (PCB Mount) , D Pak jk

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS IGSS RG Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance

Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

The IXFK94N50P2 is a N-Channel 500 V 94A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK) optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

The IXFK94N50P2 pinout refers to the configuration and function of each pin in its TO-264AA package type. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IXFK94N50P2 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

• Low RDS(on) and Qg: The IXFK94N50P2 offers low resistance and charge storage capabilities, making it suitable for high-frequency switching applications.
• Low thermal resistance RthJC: This component features a low thermal resistance, allowing for efficient heat dissipation and reduced temperature rise during operation.
• High power dissipation: The IXFK94N50P2 is designed to handle high power dissipation levels, making it suitable for demanding applications such as motor drives and power supplies.
• Dynamic dv/dt ratings: This component features dynamic dv/dt ratings, which enable high-speed switching and reduced electromagnetic interference (EMI).
• Avalanche Rated: The IXFK94N50P2 is avalanche-rated, ensuring reliable operation in harsh environments.

• SMPS/RMPS, UPS, PFC, DC-DC converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control: The IXFK94N50P2 is suitable for a wide range of applications that require high-speed switching, low voltage operation, and high power dissipation.

• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

• Fully Characterized Capacitance and Avalanche SOA

• Enhanced body diode dV/dt and dI/dt Capability

• Lead Free

• RoHS Compliant, Halogen-Free

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104A

• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74A

• IDM Pulsed Drain Current 420A

• PD @TC = 25°C Maximum Power Dissipation 380W

• Linear Derating Factor 2.5W/°C

• VGS Gate-to-Source Voltage +-20 V

• dv/dt Peak Diode Recovery 18V/ns

• TJ Operating Junction -55 to +175oC

• TSTG Storage Temperature Range -55 to +175oC

• Soldering Temperature, for 10 seconds (1.6mm from case) 300oC

• High Efficiency Synchronous Rectification in SMPS

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits