H2R Electronics

TLP152 Toshiba Optocoupler – SOIC-6 Package

The TLP152 is a photocoupler in an SO6 package that consists of a GaA ℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. The photodetector IC chip has an internal shield to provide a high common-mode transient immunity of ±20 kV/ µs and thus superior noise immunity between the input and output pins. The TLP152 has a totem-pole output that can both sink and source current. It is suitable for directly driving a small IGBT or power MOSFET.

Features:

• Buffer logic type (totem pole output)
• Output peak current: ±2.5 A (max)
• Operating temperature: -40 to 100
• Supply current: 3.0 mA (max)
• Supply voltage: 10 to 30 V
• Threshold input current: 7.5 mA (max)
• Propagation delay time: tpHL = 190 ns (max), tpLH = 170 ns (max)
• Common-mode transient immunity: ±20 kV/ µs (min)
• Isolation voltage: 3750 Vrms (min)

Features/Specs:

• Manufacturer: Toshiba
• Brand: Toshiba
• Series: TLP152
• Description/Function: Photocoupler
• Product Type: Logic Output Optocouplers
• Output Type: Totem Pole
• Number of Channels: 1 Channel
• Isolation Voltage: 3750 Vrms
• Maximum Continuous Output Current: 2.5 A
• If – Forward Current: 20 mA
• Vf – Forward Voltage: 1.57 V
• Vr – Reverse Voltage: 5 V
• Pd – Power Dissipation: 260 mW
• Rise Time: 18 ns
• Fall Time: 22 ns
• Propagation Delay – Max: 190 ns
• Operating Supply Voltage: 10 V to 30 V
• Minimum Operating Temperature: -40°C
• Maximum Operating Temperature: +100°C
• Package/Case: SOIC-6

Application:

• Plasma Display Panels (PDPs)
• Industrial Inverters
• MOSFET Gate Drivers
• IGBT Gate Drivers

The TOSHIBA mini flat coupler TLP185 is a small outline coupler, suitable for surface mount assembly. TLP185 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. Since TLP185 is smaller than DIP package, it’s suitable for high-density surface mounting applications such as programmable controllers. • Collector−emitter voltage: 80 V (min) • Current transfer ratio: 50 % (min) Rank GB: 100% (min) • Isolation voltage: 3750 Vrms (min) • Operation Temperature:-55 to 110 ˚C