H2R Electronics

• Collector to emitter voltage (Vce) is 100V
• Collector current (Ic) is 25A
• Power dissipation (Pd) is 125W
• Collector to emitter saturation voltage of 4V at 25A collector current
• DC current gain (hFE) of 10 at 15A collector current
• Operating junction temperature range from 150°C

• 2SA1668 (PNP Transistor):
  • Collector-Emitter Breakdown Voltage (Vceo): -200V
  • Collector Current (Ic): 2A
  • DC Current Gain (hFE): 60 (minimum)
  • Power Dissipation (Ptot): Varies between sources, listed as 25W and 65W.
  • Transition Frequency (ft): Varies between sources, listed as 20MHz and 30 MHz.
  • Storage Temperature Range (Tstg): -55°C to +150°C
  • Package: TO-220F
  • Applications: TV vertical output, audio output driver, general purpose.
• 2SC4382 (NPN Transistor):
  • Collector-Emitter Breakdown Voltage (Vceo): 200V
  • Collector Current (Ic): Varies between sources, listed as 2A and 1A.
  • DC Current Gain (hFE): 60 (minimum)
  • Power Dissipation (Ptot): 65W.
  • Transition Frequency (ft): 30 MHz
  • Storage Temperature Range (Tstg): -55°C to +150°C
  • Package: TO-220F
  • Applications: TV vertical output, audio output driver, general purpose. 

• Type: NPN (MN1526) and PNP (MP1526).
• Voltage: 260V.
• Current: 15A.
• Package: TO-3P.
• Application: Audio power amplifiers, particularly for driving speakers.
• Feature: Constant hFE (current gain) characteristics over a wide current range, which helps with stable and high-quality audio.
• Complementary: Designed to work together as a complementary pair. 

MN2488
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 5000

MP1620
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 230 pF
Forward Current Transfer Ratio (hFE), MIN: 5000

• Function:The A2151 and C6011 transistors are used as power transistors in audio amplifiers, where they amplify the audio signal to drive a speaker. 
• Complementary Pair:They are a complementary pair because one is an NPN transistor (C6011) and the other is a PNP transistor (A2151), allowing them to amplify both positive and negative portions of the audio signal. 
• Packaging:They are typically found in a TO-3P (or TO-247) package, which is a common type of power transistor package. 

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features

●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested

●ROHS compliant

Application

• ●  Power factor correction(PFC)

• ●  Switched mode power supplies(SMPS)

• ●  Uninterruptible Power Supply(UPS)

• ●  LLC Half-bridge

• The B2510 is a PNP power transistor manufactured by KEC 
• It's available in a TO-220F package and has an extended temperature range of -40°C to 105°C.
• This transistor is typically used in the output stage of audio amplifiers, working in conjunction with a corresponding NPN transistor to amplify the audio signal and drive speakers.
• Like other power transistors, the B2510 can carry significant current (e.g., up to 15 Amps like the MJ2955 mentioned in) and requires a heatsink for proper heat dissipation during operation.
• It's also suitable for applications in switching circuits
• D2510 transistor

• The D2510 is an NPN power transistor designed to complement the B2510.
• It's used in amplifier circuits where the supply voltage is positive, while the PNP transistor (B2510) is used where the supply voltage is negative.
• The D2510, like the B2510, is also suitable for a variety of applications beyond audio amplification, including small signal amplification, radio frequency circuits, switching, and pulse generation.
• NTE2510 as an NPN silicon transistor with a voltage of 20V and a current of 0.5A,.  an NTE2510 is described as an NPN Silicon Transistor for high frequency applications.

• Monolithic Darlington configuration
• 5A Base current
• 1°C/W Junction-to-case thermal resistance

• FSL8N80A: A common variant of the 8N80 MOSFET.

• MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Power Transistors.
• Maximum working voltage Vce = 250 volts Maximum Collector Current Ic = 8 Amp
• Max Power Dissipation = 50 Watts.
• Applications - High End Consumer Audio Products, Professional Audio Amplifiers, Theater and Stadium Sound Systems, Public Address Systems (PAs)

• MJE15032 (NPN) MJE15033 (PNP) Complementary Silicon Plastic Power Transistors.

  Designed for use as high−frequency drivers in audio amplifiers.

  Features
  • High DC Current Gain
  • High Current Gain − Bandwidth Product
  • TO−220 Compact Package
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • These Devices are Pb−Free and are RoHS Compliant*

• Complement to TIP42C
• High Switching Speed
• hFE Improved Linearity
• hFE Grouping

Communications & Networking, Audio, Signal Processing, Power Management

• Exceptional Safe Operating Area

• NPN/PNP Gain Matching within 10% from 50 mA to 3 A

• Excellent Gain Linearity

• High BVCEO

• High Frequency

• These Devices are Pb−Free and are RoHS Compliant

• Complement to NJW0302G
• Exceptional Safe Operating Area
• Gain Matching within 10% from 50 mA to 3 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• Reliable Performance at Higher Powers
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwidth

This is 400V, 15A, Silicon NPN Power Transistor.

1. TRIPLE DIFFUSED PLANER TYPE
2. HIGH VOLTAGE,HIGH SPEED SWITCHING

Absolute maximum ratings ( Tc=25°C )

1. Collector-Base voltage : Vcbo = 500 V
2. Collector-Emitter voltage : VCEO = 400 V
3. Collector-Emitter voltage : VCEO(SUS) = 400 V
4. Emitter-Base voltage : VEBO = 7 V
5. Collector current : IC = 15 A
6. Base current : IB = 5 A
7. Collector power disspation : PC = 80 W

• Collector-Emitter Volt (Vceo): 80V
• Collector-Base Volt (Vcbo): 80V
• Collector Current (Ic): 4.0A
• hfe: 40-240 @ 500mA
• Power Dissipation (Ptot): 30W
• Transition Frequency (ft): 8MHz
• Type: NPN

• Product Name : Power Transistor;Model.NO : A1941, C5198;Vcbo : 200V
• Ic : 10A;Pd (Total Power Dissipation) : 100W;Package : TO-3P

• Part number: 2SC2336 (or C2336 for short).
• Type: Silicon NPN bipolar power transistor.
• Applications: Audio frequency power amplifiers and high-frequency power amplifiers.
• Features:
  • Good linearity of hFE (current gain).
  • High collector-emitter breakdown voltage: 180V (minimum).
• Complementary pairing: The C2336 is specifically designed to be paired with the PNP transistor 2SA1006 (or A1006) for use in complementary symmetry audio amplifiers. 

• Part number: 2SA1006 (or A1006 for short).
• Type: Silicon PNP bipolar power transistor.
• Applications: Drive stages of 150 to 500-watt audio amplifiers.
• Complementary pairing: The A1006 is the complement to the NPN transistor 2SC2336.