H2R Electronics

Type Designator: IPW60R070C6
   Marking Code: 6R070C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 391 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 170 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247

R6042JNZ4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.
PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package.

It is intended for switching and industrial applications from single and three-phase mains.

• High current capability
• Fast switching speed

The D44H11 is a 80V NPN Complementary Power Transistor manufactured in low voltage Multiepitaxial planar technology. It is intended for general purpose linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.

• Low collector-emitter saturation voltage
• Fast switching speed
• Well-controlled hFE parameter for increased reliability

Applications

Power Management

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS) TK8A60DA Switching Regulator Applicat ions
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•
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• Low drain-source O N resistance: RDS (ON) = 0.
8 (typ.
) High forward transfer admittance: Y fs = 4.
0 S (typ.
) Low leakage curren t: IDSS = 10 μA (max) (VDS = 600 V) En hancement-mode: Vth = 2.
0 to 4.

The CRSS042N10N is a high-performance N-channel power MOSFET from CR Microusing SkyMOS1 technology, designed for high-current switching, motor drives, and UPS systems. Housed in a TO-263 package, it features a 100V VDS𝑉𝐷𝑆, 120A/172A continuous drain current, and extremely low on-resistance (RDS(on)𝑅𝐷𝑆(𝑜𝑛) max 3.6mΩΩ - 4.2mΩΩ). 华润微电子有限公司 +3Key Features and Specifications

• Voltage (VDS𝑉𝐷𝑆): 100 V
• Current (ID𝐼𝐷): 120A (Package Limit) to 172A (Silicon Limit)
• On-Resistance (RDS(on)𝑅𝐷𝑆(𝑜𝑛)): ~3.4 mΩΩ (typ), 3.6 mΩΩ - 4.2 mΩΩ (max) at 𝑉𝐺𝑆=10𝑉
• Package: TO-263 (D²PAK) Surface Mount
• Technology: SkyMOS1 (N-channel enhancement mode)
• Gate Charge (Qg𝑄𝑔): ~90 nC
• Power Dissipation (Ptot𝑃𝑡𝑜𝑡): 227 W (𝑇𝐶=25∘𝐶) 华润微电子有限公司 +3

Common Applications

• Motor control and drives
• Battery Management Systems (BMS)
• Uninterruptible Power Supplies (UPS)
• DC-DC Converters 华润微电子有限公司 +1

Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 41 A
   Non repetitive surge peak on-state current (I_TSM): 410 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.9 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 80 mA

The BTA16-800B is a TRIAC, a type of semiconductor device that acts like two thyristors connected in anti-parallel. It is designed for AC switching applications and features a 600V voltage rating and a current rating of 18A (RMS). "B" in the part number indicates a TO-220AB package, and the "600B" specifies the voltage ratingKey Features and Characteristics:

• Voltage Rating: 600V (VDRM/VRRM) 
• Current Rating: 18A (IT(RMS)) 
• Package: TO-220AB (BTA series) 
• Applications: General purpose AC switching, static relays, heating regulation, motor speed control. 
• Snubberless Versions: Available for use with inductive loads, offering high commutation capability. 
• Logic Level Versions: Available for direct interfacing with microcontrollers. 
• Insulated Tab: The BTA series has an insulated tab rated at 2500V RMS, according to a datasheet from STMicroelectronics. 
• Commutation Capability: High commutation (4Q) or very high commutation (3Q) depending on the specific version. 
• RoHS Compliant: The packages are RoHS (2002/95/EC) compliant. 

Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 41 A
   Non repetitive surge peak on-state current (I_TSM): 410 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.9 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 80 mA

Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 6 A
   Non repetitive surge peak on-state current (I_TSM): 60 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 400 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.7 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 50 mA

The TK100E10N1 is a Toshiba N-channel Power MOSFET with a 100V drain-source voltage and a 207A continuous drain current. It is commonly used in switching voltage regulators and comes in a 3-pin TO-220 package. Key Specifications and Features Feature Description Manufacturer Toshiba Channel Type N-Channel Drain-Source Voltage (Vdss) 100 V Continuous Drain Current (Id) 207 A (@ 25°C case temperature) Max Power Dissipation (Pd) 255 W Drain-Source On-Resistance (Rds(on)) 2.8 mΩ (typical @ 10V Vgs, 50A Id) Gate Threshold Voltage (Vth) 2.0 V to 4.0 V Package Type TO-220 (Through Hole mounting) Max Operating Temperature 150 °C Typical Gate Charge (Qg) 140 nC (@ 10V Vgs)

The 2SC5200 is an NPN transistor, used in different AF amplifiers and high power-based audio circuits because of its high collector current and high gain of current. This transistor is manufactured by Toshiba and it is still replaced with TTA5200.

The BU406 is a silicon NPN power transistor primarily designed for high-speed switching applications. It is commonly found in the horizontal deflection circuits of CRT-based TVs and monitors due to its high voltage and fast switching capabilities