H2R Electronics

Type Designator: IRF460

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 190(max) nC

Rise Time (tr): 120(max) nS

Drain-Source Capacitance (Cd): 1000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO3

MDF13N50B 13N50 MagnaChip To-220F N-Channel Mosfet 13A 500V di Tokopedia ¿¿¿ Promo Pengguna ... 18N20GH AP18N20GH 18N20 SMD Mosfet Transistor To-252 18A 200V.

To-3P NPN Power Transistor E13009L E13009 13009L 13009 We at H2R ELECTRONICS believe in superb quality of spare parts related to amplifier, induction and inverters.
Our major management brands are TOSHIBA, ON, ST, BELL, CDIL, IXYS, HITACHI, HLF, INFINION, SANKEN, ETC. 
Why to choose us? 1) We provide best prices in retail and wholesale format. 2) We deliver geniune quality products.3) We give 100% gauranteed good.4) Customer satisfaction is our prime motto.

The 2N6027 is a Programmable Unijunction Transistor (PUT) with an anode gate, designed for timing, oscillator, and thyristor-triggering applications. It features a low 1.5V maximum on-state voltage, low gate-to-anode leakage current, low offset voltage, and high peak output voltage, all controllable by external resistors. Packaged in a TO-92 plastic package, it is suitable for high-volume, automated insertion, and is a three-terminal device with negative-resistance characteristics that enable rapid switching.

The 2SA1216 and 2SC2922 are complementary PNP and NPN power transistors, respectively, manufactured by Sanken Electric Co., Ltd. They are designed for high-fidelity audio amplifier output stages and general-purpose applications. The 2SA1216 is a PNP transistor, while the 2SC2922 is its NPN complement. Both are available in the TO-3P (also known as MT-200) package. Key Specifications:

• Voltage: 180V Collector-Emitter Breakdown Voltage (VCEO)
• Current: 17A Continuous Collector Current (IC)
• Power: 200W Maximum Power Dissipation (PD)
• Frequency: 50MHz Transition Frequency (fT)
• hFE: 30 @ 8A, 4V (typical)
• Package: TO-3P (MT-200) 

RJH3047 IGBT PACKAGE TYPE TO-247 VOLTAGE = 330V CURRENT = 50A 
Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   tr ⓘ - Rise Time, typ: 60 nS
   Package: TO3P

The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =150V,ID =140A RDS(ON) <6.2mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous 

Type Designator: 2SD1691
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO126

The IRF3205 is a high current N-Channel MOSFET that can switch currents upto 110A and 55V.

Pin Configuration

The 60N10 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power switching applications. It's a versatile device due to its relatively low on-resistance and ability to handle high currents. While "ST" is often associated with STMicroelectronics, the 60N10 can be manufactured by various companies, including ST. Key Features of the 60N10 MOSFET:

• N-Channel:Indicates that the MOSFET is turned on when a positive voltage is applied to the gate relative to the source. 
• 100V/60A:This specifies the maximum drain-source voltage (100V) and continuous drain current (60A) that the device can handle. 
• TO-220 Package:A common and widely used package for power MOSFETs, allowing for efficient heat dissipation. 
• Low On-Resistance:This characteristic minimizes power losses when the MOSFET is in the ON state, making it suitable for switching applications. 
• High Switching Speed:MOSFETs are known for their ability to switch on and off quickly, which is crucial for efficient power conversion. 
• Applications:The 60N10 is often found in applications like:
  • High-current, high-speed switching circuits 
  • Solenoid and relay drivers 
  • DC-DC converters 
  • Motor control circuits 
  • Power supplies 

LM317K 1.2V to 37V Adjustable Voltage Regulator ICThe LM317K is an adjustable 3−terminal positive voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of −1.2 V to −37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors and one output capacitor for frequency compensation. Moreover, it features internal current limiting, thermal shutdown and safe area compensation, making it essentially blow−out proof.

The LM317K offers a wide variety of applications including local, on-card regulation. This device also used to make a programmable output regulator. Or by connecting a fixed resistor between the adjustment and output, the LM337 also used as a precision current regulator. Meanwhile, the circuit design has been optimized for excellent regulation and low thermal transients. The LM317 designed as a monolithic integrated circuit manufactured in TO-3 and D2PAK packages intended for use as positive adjustable voltage regulators.  The nominal output voltage selected by means of only a resistive divider. Thus making the device exceptionally easy to use and eliminating the stocking of many fixed regulators.

 

Applications

• Industrial Power Supplies
• Factory Automation Systems and also Building Automation Systems
• PLC Systems
• Instrumentation
• Networking
• Set-Top Boxes

Type Designator: 2N5551    Material of Transistor: Si    Polarity: NPN    Maximum Collector Power Dissipation (Pc): 0.31 W   Maximum Collector-Base Voltage |Vcb|: 180 V   Maximum Collector-Emitter Voltage |Vce|: 160 V   Maximum Emitter-Base Voltage |Veb|: 6 V   Maximum Collector Current |Ic max|: 0.6 A   Max. Operating Junction Temperature (Tj): 135 °C   Transition Frequency (ft): 100 MHz   Collector Capacitance (Cc): 6 pF   Forward Current Transfer Ratio (hFE), MIN: 80    Noise Figure, dB: -   Package: TO92

MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-chan nel MOS Field Effect Transistor designe d for high current switching applicatio ns.
FEATURES
• Low on-state resistan ce RDS(on) = 10 mΩ MAX.
(VGS = 10 V, I D = 42 A)
• Low input capacitance Cis s = 5300 pF TYP.
ORDERING INFORMATION PART NUMBER 2SK4145-S19-AY Note LEAD P LATING Pure Sn (Tin) PACKING Tube 50 p /tube PACKAGE TO-220 typ.
1.
9 g Note Pb-free (This product does not contain Pb in the external electrode).
ABSOLUT E MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS .

H2r Electronics - Wholesaler Of Power Transistor, Integrated Circuits and DTH Remote Since 2012 in New Delhi

his is NPN Triple Diffused Planar Silicon Transistor.
Features

• High speed.
• High breakdown voltage
• Adoption of MBIT process.
• On-chip damper diode. 

2SA1837 - A1837 PNP 1A 230V transistor used for power amplifier applications, driver stage amplifier applications etc.

2SC1815 KEC Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Type Designator: 2N5401 
   Material of Transistor: Si 
   Polarity: PNP 
   Maximum Collector Power Dissipation (Pc): 0.31 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 60 
   Noise Figure, dB: -
   Package: TO92

The MJE340 is a high-voltage NPN bipolar junction transistor (BJT) designed for low-current, high-voltage amplification and switching applications. It is commonly used as a driver transistor in audio amplifiers, SMPS, and voltage regulator circuits.

The KSE340 and KSE350 are a complementary pair of NPN and PNP epitaxial silicon transistors, respectively, often used in audio amplifier circuits. They are known for their high collector-emitter breakdown voltage and are suitable for general-purpose high-voltage applications. KSE340 (NPN):

• High Collector-Emitter Breakdown Voltage:This feature allows the KSE340 to handle relatively high voltages without breaking down. 
• Suitable for Transformer Applications:The KSE340's characteristics make it suitable for use in circuits with transformers. 
• Complementary to KSE350:It's designed to work with the KSE350, forming a complementary pair for push-pull amplifier designs. 
• General Purpose:The KSE340 is a versatile transistor suitable for a range of applications, particularly where high voltage is involved. 

KSE350 (PNP):

• High Collector-Emitter Breakdown Voltage: Similar to the KSE340, the KSE350 also features a high voltage rating. 
• Suitable for Transformer Applications: Can be used in circuits with transformers. 
• Complementary to KSE340: Designed to work with the KSE340 in complementary circuits. 
• General Purpose: Suitable for various applications where high voltage PNP transistors are needed. 

Key Characteristics:

• Package: Both transistors typically come in a TO-126 package.
• Current Rating: Both transistors have a collector current rating of 0.5A.
• Power Rating: They both have a power rating of 20W. 

The 2SA1381 and 2SC3503 are a complementary pair of bipolar junction transistors (BJTs) often used in audio amplifiers and other electronic circuits. The 2SA1381 is a PNP type, while the 2SC3503 is an NPN type, making them suitable for push-pull configurations. They are known for their high gain, ability to handle significant voltage and current, and suitability for audio applications. Key characteristics and applications:

• PNP/NPN Complementary Pair:The 2SA1381 (PNP) and 2SC3503 (NPN) transistors are designed to work together, with the 2SA1381 typically used in the "high side" of a circuit and the 2SC3503 in the "low side". 
• High Voltage and Current Handling:They are capable of handling relatively high voltages and currents, making them suitable for power amplifier designs. 

 Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 12 A
   Maximum RMS on-state current (I_T(RMS)): 12 A
   Non repetitive surge peak on-state current (I_TSM): 120 A
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA

Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 16 A
   Non repetitive surge peak on-state current (I_TSM): 160 A
   Triggering gate voltage (V_GT): 1.8 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 50 mA

Characteristics of TTA004b Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -160 V
• Collector-Base Voltage, max: -160 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -1.5 A
• Collector Dissipation: 10 W
• DC Current Gain (h_fe): 140 to 280
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

The complementary NPN transistor to the TTA004b is the TTC004B.

The 40TPS... SAFEIRs eries of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125°C junction temperature. Low Igt parts available.

 SFP30H06A Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applications. Package:TO-247AC-A SFP30H06A SFP30H06A-HF
■ Productor Character ■ Primary Use ● Super fast switching for high efficiency. ● Low reverse leakage. ● High forward surge current capability. ● RoHS Product. 

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

• Enhanced body diode dV/dt and dI/dt capability
• Fully characterized capacitance and avalanche SOA
• Drain to source voltage (Vds) of 200V
• Gate to source voltage of ±30V
• On resistance Rds(on) of 8mohm at Vgs 10V
• Power dissipation Pd of 520W at 25°C
• Operating junction temperature range from -55°C to 175°C

Type Designator: IRFP4229PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm